Global Silicon Carbide Power Semiconductor Market 2021

January 2022 | 13 pages | ID: GEA7CE982F64EN
StrategyHelix Inc

Abstracts

Silicon carbide (SiC) is a compound semiconductor composed of silicon and carbide. Silicon carbide exhibits the level of hardness that is approximately equivalent to a diamond, which enables SiC semiconductors to operate in harsh conditions. Moreover, the characteristics of silicon carbide that provide an edge over the traditional silicon semiconductor in the power semiconductors market are its higher breakdown electric field strength, wider band gap, lower thermal expansion, and resistance to chemical reaction. The global silicon carbide power semiconductor market is poised to grow by US$ 1,026 million during 2021-2027, progressing at a CAGR of 18.3% during the forecast period, according to data and analytics company StrategyHelix. Increase in the demand for consumer electronics and wireless communications, growing demand for energy-efficient battery-powered portable devices, growth in demand of electric vehicles, plug-in electric vehicles, and hybrid electric vehicles are expected to boost the market growth in the coming years.

The report provides up-to-date market size data for period 2017-2020 and forecast to 2027 covering key market aspects like sales value for silicon carbide power semiconductor. The global silicon carbide power semiconductor market is segmented on the basis of type, application, and region. By type, the global silicon carbide power semiconductor market has been segmented into discrete product, power product. The discrete product segment was the largest contributor to the global silicon carbide power semiconductor market in 2020. Based upon application, the global silicon carbide power semiconductor market is categorized into automotive, IT & telecommunication, consumer electronics, aerospace & defense, industrial, energy & power, others. Geographically, the global silicon carbide power semiconductor market is segmented into North America, Asia Pacific, Europe, Rest of the World (ROW).

The global silicon carbide power semiconductor market is highly competitive. The silicon carbide power semiconductor market is dominated by key players, which are Broadcom Inc., Cree Inc., Fuji Electric Co. Ltd., Hitachi Power Semiconductor Device Ltd., Infineon Technologies AG, Mitsubishi Electric Corporation, NXP Semiconductors N.V., ON Semiconductor Corporation, Renesas Electronics Corporation, SEMIKRON International GmbH, STMicroelectronics N.V., Texas Instruments Incorporated, Toshiba Corporation, United Silicon Carbide Inc.

Report Scope
Type: discrete product, power product
Application: automotive, IT & telecommunication, consumer electronics, aerospace & defense, industrial, energy & power, others
Region: North America, Asia Pacific, Europe, Rest of the World (ROW)
Years considered: this report covers the period 2017 to 2027

Key Benefits for Stakeholders
Get a comprehensive picture of the global silicon carbide power semiconductor market
Pinpoint growth sectors and trends for investment

Contents

PART 1. INTRODUCTION

Scope of the study
Study period
Geographical scope
Research methodology

PART 2. SILICON CARBIDE POWER SEMICONDUCTOR MARKET OVERVIEW

PART 3. MARKET BREAKDOWN BY TYPE

Discrete product
Power product

PART 4. MARKET BREAKDOWN BY APPLICATION

Automotive
IT & telecommunication
Consumer electronics
Aerospace & defense
Industrial
Energy & power
Others

PART 5. MARKET BREAKDOWN BY REGION

North America
Asia Pacific
Europe
Rest of the World (ROW)

PART 6. KEY COMPANIES

Broadcom Inc.
Cree Inc.
Fuji Electric Co., Ltd.
Hitachi Power Semiconductor Device, Ltd.
Infineon Technologies AG
Mitsubishi Electric Corporation
NXP Semiconductors N.V.
ON Semiconductor Corporation
Renesas Electronics Corporation
SEMIKRON International GmbH
STMicroelectronics N.V.
Texas Instruments Incorporated
Toshiba Corporation
United Silicon Carbide, Inc.
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