Gallium Arsenide Components, Next Generation Semiconductors: Market Shares, Market Strategies, and Market Forecasts, 2020 to 2026

May 2024 | 212 pages | ID: G1CF92780BFBEN
WinterGreen Research

Abstracts

LEXINGTON, Massachusetts (February 26, 2020) – WinterGreen Research announces that it has a new study on Gallium Arsenide (GaAs) Next Generation Semiconductors, Market Shares, Market Forecasts, Market Analysis, 2020-2026. The 2020 study has 212 pages, 116 tables and figures. GaAs represents next generation semiconductors, a market that is $500 billion dollars in 2020.

Next generation GaAs semiconductors promise to bring a huge market, not totally replacing the existing semiconductor market, but ultimately making a huge dent in it. The ability to replace silicon semiconductors, a market that is $500 billion dollars in 2020 makes one sit up and take notice. The existing silicon semiconductor market is pretty good size for a market that barely existed in 1975. Next generation GaAs support the signal speed that is needed to implement 5G.

GaAs works in a way that silicon cannot. The potential for the next generation GaAs wafers is staggering, with the overall semiconductor market likely to surpass $20 trillion by 2026 as the new industrial revolution takes hold and 5G supports IoT that connects all things together.

Once economies of scale are realized these semiconductor GaAs markets are expected to really take off. The sheer size of the global semiconductor market at $500 billion dollars in 2020 shows that the potential for a next generation semiconductor technology is truly exciting. The gallium arsenide wafers are next generation technology because they operate faster than the silicon semiconductors, they support a new, faster network called 5G.

Gallium arsenide GaAs represents the next generation of semiconductor chips because the chips can do things that the silicon chips cannot do. GaAs does have a considerably higher bandgap than silicon. It is a direct band gap semiconductor with a zinc blende crystal structure.

Sensing for autonomous and electric vehicles is one use of the technology. 3D Sensing for consumer electronics and use for lasers is common. Units are used in radar and lasers. The benefits of using GaAs in devices derive in part from the characteristic that GaAs generates less noise than most other types of semiconductor components. As a result, it is useful in weak-signal amplification applications.

Due to these benefits related to generating less noise, GaAs is a suitable replacement for silicon in the manufacture of linear and digital ICs. A gallium arsenide wafer is also known as Gallium arsenide substrate. Economies of scale for gallium arsenide promise to make the technology viable.

Silicon commercial advantage is that it is a thousand times cheaper to make. As we move into the 5G era, that advantage will dissipate because of the volume of GaAs components that are made to meet demand permitting vendors to leverage economies of scale. Gallium arsenide material technical advantages over silicon are that electrons race through its crystalline structure faster than they can move through silicon. Cellphones, typically rely on speedy gallium arsenide chips to process the high-frequency radio signals that arrive faster than silicon can handle.

Unlike silicon cells, Gallium Arsenide cells are relatively insensitive to heat. Alloys made from GaAs using Al, P, SB, or In have characteristics complementary to those of GaAs, allowing great flexibility. GaAs is very resistant to radiation damage. This, along with its high efficiency, makes GaAs very desirable for space applications. GaAs biggest drawback is the is the high cost of a single-crystal GaAs substrate which has been a barrier to volume manufacturing.

GaAs markets at $3.8 billion in 2020 promise to grow to $22 billion by 2026. With the opportunity to participate in the 5G next generation semiconductor markets. Gallium arsenide components will achieve broad economies of scale, making them far more affordable and more available.

WinterGreen Research is an independent research organization funded by the sale of market research studies all over the world and by identifying next generation technology. It is next generation technology that drives market growth. The company has 35 distributors worldwide, including Global Information Info Shop, Market Research.com, Research and Markets, Report Linker, and Electronics.CA,.

WinterGreen Research is positioned to help customers facing challenges that define the modern enterprises. The increasingly global nature of science, technology and engineering is a reflection of the implementation of the globally integrated enterprise. Customers trust wintergreen research to work alongside them to ensure the success of the participation in a particular market segment.

WinterGreen Research supports various market segment programs; provides trusted technical services to the marketing departments. It carries out accurate market share and forecast analysis services for a range of commercial and government customers globally. These are all vital market research support solutions requiring trust and integrity.

Contents

ABSTRACT: GALLIUM ARSENIDE SEMICONDUCTORS INDIUM PHOSPHIDE, GALLIUM NITRIDE AND SILICON CARBIDE RELATED MARKETS

Gallium Arsenide Semiconductors and Powders

EXECUTIVE SUMMARY

Economies of Scale for Gallium Arsenide

1. GALLIUM ARSENIDE SEMICONDUCTORS: MARKET DESCRIPTION AND MARKET DYNAMICS

1.1 Gallium Arsenide (GaAs)
  1.1.1 Gallium Arsenide (GaAs) Advantages
  1.1.2 Gallium Arsenide (GaAs) Overcomes Disadvantages
  1.1.3 Working Electronic Circuits in a Gallium Arsenide Device
  1.1.4 Gallium and Arsenic High-Pressure Synthesis of GaAs
1.2 Crystal Growth
  1.2.1 VGF Crystal Growth Process
  1.2.2 GaAs LEC Crystal Growth Process
  1.2.3 Crystal Annealing
1.3 GaAs Crystal Analysis
1.4 Converting a GaAs Crystal Into Wafers - Mechanical Wafering
1.5 GaAs Sawing
1.6 Gallium Arsenide (GaAs)

2. GALLIUM ARSENIDE SEMICONDUCTORS MARKET SHARES AND FORECASTS

2.1 Gallium Arsenide Next Generation Semiconductors Market Driving Forces
  2.1.1 Gallium Arsenide vs. Silicon Semiconductors
2.2 Gallium Arsenide Components and Powders Market Shares
2.3 Gallium Arsenide Components and Powders Market Forecasts, Units and Dollars
  2.3.1 Gallium Arsenide GaAs Unit Analysis
2.4 Gallium Arsenide Semiconductor Market Segments
  2.4.1 GaAs VGF vs GaAs LEC % Market Share
  2.4.2 Gallium Arsenide (GaAs) in Cell Phones
  2.4.3 Gallium Arsenide LEDs
2.5 Gallium Arsenide Semiconductor Regional Market Analysis

3. GALLIUM ARSENIDE, SIC, AND IND MARKET SIZE BY SECTOR

3.1 GaAs Wide Bandgap Material
3.2 GaAs Dollars - 3D Sensing for Autonomous And Electric Vehicles, 3D Sensing for Consumer Electronics, and More, Summary
3.3 3D Sensing for Autonomous And Electric Vehicles and 3D Sensing for Consumer Electronics, Units and Dollars
3.4 GaAs Units
3.5 GaAs, InP Segment Analysis Optical Infrastructure and Datacenters, Dollars, Units, and Percent, Worldwide, 2019 to 2022
3.6 GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antennae, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022
3.9 SIC Segment Analysis Electric Vehicles, Smart Grid Power, Switching, Solar and Wind Energy, Dollars, Units, and Percent, Worldwide, 2019 to 2022,
  3.6.1 Solar

4 GALLIUM ARSENIDE NEXT GENERATION SEMICONDUCTORS RESEARCH AND TECHNOLOGY

4.1 Silicon and GaAs Crystal Structure
  4.1.1 GaAs and Other Compound Semiconductors Characteristics Comparison
4.2 Silicon and Gallium Arsenide Energy Band Structure
4.3 GaAs in Solar
4.4 Gallium arsenide (GaAs) Advantages over Silicon
4.5 CMOS Wideband Switches
4.6 SIC
  4.6.1 Gallium Nitride
4.7 Bandgaps in Different Semiconductor Materials
  4.7.1 Comparing GaAs, Si, SiC, and GaN Bandgaps
  4.7.2 Gallium Nitride and Silicon Carbide
4.8 Gallium Nitride
4.9 Epitaxial Growth: Complex Series of Chemical Layers Grown on Top of Wafers
4.10 GaAs Environmental Aspects

5 GALLIUM ARSENIDE SEMICONDUCTORS COMPANY PROFILES

5.1 Advanced Wireless Semiconductor
5.2 Anadigics/GaAs Labs
5.3 Avago Technologies
5.4 AXT
  5.4.1 AXT InP
  5.4.2 AXT Ge
  5.4.3 Semi-insulating GaAs
  5.4.4 AXT Raw Materials
5.5 BWT
  5.5.1 BWT Has Been Focusing On Fiber Pigtailed Diode Laser Packaging And Assembly
  5.5.2 BWT High Power, High Brightness, Fiber Coupled Diode Laser
5.6 China Crystal Technologies
  5.6.1 China Crystal Technologies Revenue
5.7 Cree Billion Dollar Commitment to SiC Mosfets
5.8 DOWA Electronics Materials
5.9 Freiberger Compound Materials
  5.9.1 GaAs Wafer Technologie - Freiberger Compound Materials
  5.9.2 Freiberger High Pressure Synthesis of GaAs
  5.9.3 Freiberger VGF Crystal Growth
  5.9.4 Freiberger Crystal Annealing
  5.9.5 Freiberger Electrical Properties of GaAs
  5.9.6 Freiberger Mechanical Wafering
5.10 Hanergy Holdings/AltaDevices
  5.10.1 Alta Devices Mass Production
  5.10.2 Alta Devices Disrupting Traditional Solar Technologies
  5.10.3 Alta Devices thin-film gallium arsenide solar technology
5.11 Hittite Microwave
5.12 IQE
  5.12.1 ICE Geographical Revenue
  5.12.2 ICE Sites and Technologies
5.13 M/A-COM Technology Solutions
5.14 Murata Manufacturing
5.15 Qorvo
5.16 RFMD
5.17 Shenzhou Crystal Technology
5.18 Skyworks Solutions
5.19 Sumitomo Electric
5.20 Tianjin Jingming Electronic Materials
5.21 Texas Instruments: LMG3410R050 GaN Device
5.22 TriQuint Semiconductor Inc
5.23 Yunnan Lincang Xinyuan Germanium Industry Co
5.24 Umicore
  5.24.1 7.12.2 Umicore
5.25 Vishay Gallium Arsenide LEDs
5.26 WIN Semiconductors
5.27 II-VI
  5.27.1 II-VI Finisar Acquisition
  5.27.2 II-VI Reporting Segments
  5.27.3 II-VI Incorporated
  5.27.4 Finisar
  5.27.5 II-VI Segment Revenue by End Markets for Full Year FY19
5.28 Selected Gallium Arsenide Market Participants

WINTERGREEN RESEARCH,

WinterGreen Research Methodology
WinterGreen Research Process
Market Research Study

List Of Tables

LIST OF TABLES AND FIGURES

Abstract: Gallium Arsenide Semiconductors Indium Phosphide, Gallium Nitride And Silicon Carbide Related Markets
Figure 1. Gallium Arsenide Next Generation Semiconductor Components Market Forecasts, Dollars, Worldwide, 2020-2026
Figure 2. GaAs VGF Furnace Equipment
Figure 3. GaAs LEC Crystal Growth Process
Figure 4. GaAs LEC Crystal Growth Furnace
Figure 5. 2.1 GaAs Crystal Analysis
Figure 6. Crystal Grinding
Figure 7. GaAs Sawing
Figure 8. GaAs Wire Saw
Figure 9. GaAs Edge Rounding
Figure 10. Advantages of GaAs
Figure 11. Disadvantages of GaAS
Figure 12. Gallium Arsenide Components and Powders: Dollars, Market Shares Worldwide 2019
Figure 13. Gallium Arsenide Components and Powders: Dollars, Market Shares Worldwide 2019
Figure 14. Gallium Arsenide Components and Powders Company Market Presence, Dollars, Worldwide, 2019
Figure 15. Gallium Arsenide Primary Competitive Factors
Figure 16. Factors Impacting Ability to Compete in Gallium Arsenide Product Target Markets:
Figure 17. Gallium Arsenide Next Generation Semiconductor Components Market Forecasts, Dollars, Worldwide, 2020-2026
Figure 18. Gallium Arsenide Components Market Forecasts, Dollars, Worldwide, 2020-2026
Figure 19. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Units, Worldwide, 2019 to 2022
Figure 20. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Dollars, Worldwide, 2019 to 2022
Figure 21. Gallium Arsenide Formulations
Figure 22. Gallium Arsenide (GaAs) Wafer Market Segments by Type
Figure 23. Gallium Arsenide (GaAs) Wafer Market Segment by Applications
Figure 24. Advantages of GaAs
Figure 25. Advantages of CMOS
Figure 26. Gallium Arsenide (GaAs) Components Dollars, Regional Market Segments 2019
Figure 27. Gallium Arsenide (GaAs) Regional Market Segments, Dollars, and Percent, Worldwide, 2019
Figure 28. China Crystal Technologies Regional Market Segments, Dollars, # Shipments, and Percent, Worldwide, 2019
Figure 29. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Dollars, Worldwide, 2019 to 2022
Figure 30. GaAs and InP Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Dollars, Units, and Percent, Worldwide, 2019 to 2022
Figure 31. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Units, Worldwide, 2019 to 2022
Figure 32. GaAs, InP Segment Analysis Optical Infrastructure and Datacenters, Dollars, Units, and Percent, Worldwide, 2019 to 2022
Figure 33. GaAs Segment Analysis Optical Infrastructure and Datacenters, Dollars, Worldwide, 2019 to 2022
Figure 34. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antennae, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022
Figure 35. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022
Figure 36. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022 (Continued)
Figure 37. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022
Figure 38. GaAs Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022
Figure 39. SIC Segment Analysis Electric Vehicles, Smart Grid Power, Switching, Solar and Wind Energy, Dollars, Units, and Percent, Worldwide, 2019 to 2022,
Figure 40. GaAs Solar Power
Figure 41. GaAs Lasers, Sensors, Radar, and 5G Communications
Figure 42. GaAs Segmentation
Figure 43. GaAs Addressing Growing Markets
Figure 44. II-VI GaAs Platform + Finisar Microelectronics Design Expertise
Figure 45. Silicon and GaAs Crystal Structure
Figure 46. GaAs and Other Compound Semiconductor Characteristics
Figure 47. Silicon and Gallium Arsenide Energy Band Structure
Figure 48. GaAs Processing: Semi Insulating Starting Wafer
Figure 49. GaAs Processing: Semi Insulating Strip and Etch of Wafer
Figure 50. GaAs Etch , Connectors, and Liftoff Processing
Figure 51. GaAs Processing: Semi Insulating Resist, Strip, Anneal, and Layer Encapsulation Wafer
Figure 52. Advantages of Gallium Arsenide over Silicon
Figure 53. GaAs for LEDs
Figure 54. Comparison of SIC and GaAS Bandgaps
Figure 55. Gallium Nitride and Silicon Carbide Comparison of Bandgaps
Figure 56. Silicon Carbide.
Figure 57. Gallium Nitride
Figure 58. AXT Revenue 2019, first 3 Quarters
Figure 59. AXT Revenue by Segment 2019, first 3 Quarters
Figure 60. AXT Investments in Raw Materials
Figure 61. AXT Revenue Amounts by Product Type
Figure 62. AXT Product Applications
Figure 63. AXT Geographical Information
Figure 64. BWT
Figure 65. BWT Products
Figure 66. BWT Product Modules
Figure 67. BWT Beijing Laser Products
Figure 68. BWT Beijing Diode Laser Products
Figure 69. BWT High Power, High Brightness, Fiber Coupled Diode Laser
Figure 70. Zhongke Jingdian Information Materials Beijing
Figure 71. China Chrystal Technologies Factory and Headquarters
Figure 72. Lab China Crystal Technologies.
Figure 73. Top Countries Supplied by China Crystal Technologies Co., Ltd.
Figure 74. China Crystal Technologies Products
Figure 75. China Crystal Technologies Regional Market Segments, Dollars, # Shipments, and Percent, Worldwide, 2019
Figure 76. Cree CAB450M12XM3 (PDF) is a 1200V, 450A Silicon Carbide HalfBridge Module.
Figure 77. Cree High-Power Device Uses
Figure 78. DOWA Electronics Materials Products
Figure 79. Dowa Electronics Headquarters
Figure 80. DOWA Powders
Figure 81. Freiberger Corporate Headquarters
Figure 82. GaAs Wafer - Freiberger Compound Materials
Figure 83. Alta Devices Thin Layer Flexible, and Lightweight Solar Cell
Figure 84. Alta Devices Mass Production Tools To Support Thin Film GaAs for Solar Panels
Figure 85. Alta Devices Thin And Lightweight Solar Cells Provide Conversion Efficiency
Figure 86. IQE Operates at Wafer Production, Chip Fabrication, and Device Manufacture Levels
Figure 87. ICE Geographical Revenue
Figure 88. ICE Sites and Technologies
Figure 89. Texas Instruments Gate Driver Circuitry Along with 600V GaN Transistor
Figure 90. Yunnan Lincang Xinyuan Germanium Products
Figure 91. Umicore's Precious Metals Facility in Hoboken, Belgium.
Figure 92. Umicore SA’s Large Metal Manufacturing Complex in Hoboken
Figure 93. London Gold Bar Manufactured by the Umicore Group
Figure 94. Umicore Revenue by Segment
Figure 95. Umicore Revenue by Geography
Figure 96. II-VI GaAs Applications
Figure 97. II-VI GaAs Features
Figure 98. 14G Photodiode Top Contact
Figure 99. II-VI’s Compound Semiconductor Photonic Solutions Segment
Figure 100. II-VI’s Key End Markets
Figure 101. II-IV Two Six Market Segments
Figure 102. II-VI Core and Growth Markets
Figure 103. II-VI Customer Base
Figure 104. II-VI Revenue Growth Brought by Transformative Acquisitions
Figure 105. II-VI Transformative Acquisitions
Figure 106. Finisar Brings Significant Next-Generation Technologies For Communications, 3D Sensing, and LiDAR Enabling New Market Growth
Figure 107. II-VI Addressing Multiple Strong and Growing Markets
Figure 108. II-VI 3D Sensing and LiDAR
Figure 109. II-VI Power Electronics for Green Energy
Figure 110. II-VI Power Electronics for Green Energy
Figure 111. II-VI Industrial Laser Materials Processing
Figure 112. II-VI Aerospace & Defense
Figure 113. II-VI EUV Lithography
Figure 114. II-VI Segment Revenue by End Markets for Full Year FY19
Figure 115. II-VI Revenue Percent by Segment FY 2019
Figure 116. II-VI Revenue by Segment FY 2019