Nanomemory: Market Research Report

Date: July 22, 2009
Pages: 558
US$ 3,950.00
Publisher: Global Industry Analysts, Inc
Report type: Strategic Report
Delivery: E-mail Delivery (PDF)
ID: NE608243C59EN

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Nanomemory: Market Research Report
This report analyzes the Global Market for Nanomemory in Millions of US$.

The types of Nanomemory technologies discussed in the report include: Ferroelectric Random Access Memory or FRAM, Magnetoresitive Random Access Memory or MRAM, Ovonic Unified Memory, Holographic Memory, Nano-RAM or NRAM, Molecular Memory, and Polymer memory.

Annual forecasts are provided for the period of 2010 through 2015.

The report profiles 40 companies including many key and niche players worldwide such as Advanced Micro Devices, Inc., California Molecular Electronics Corporation, Cavendish Kinetics, Colossal Storage Corporation, Cypress Semiconductor Corporation, Everspin Technologies, Inc., Fujitsu Limited, Hewlett-Packard Development Company, L.P, Hitachi, Ltd., Honeywell International Inc., International Business Machines Corp., Infineon Technologies AG, Intel, Nanochip, Inc., Nanosys, Inc., Nantero, Inc., NVE Corporation, Ovonyx, Inc., Ramtron International Corporation, Samsung Electronics Co., Ltd., SanDisk Corporation, STMicroelectronics NV, Texas Instruments Inc., and ZettaCore, Inc.

Market data and analytics are derived from primary and secondary research.

Company profiles are mostly extracted from URL research and reported select online sources.

Study Reliability and Reporting Limitations
Data Interpretation & Reporting Level
Product Definitions and Scope of Study



Modern Day Storage Woes
Nanomemory to the Rescue

Table 1. World Long Term Projections for Nanomemory Market- Annual Sales Figures in US$ Billion for the Years 2010 through 2015 (includes corresponding Graph/Chart)

Who Leads the Pack?
Conventional Vs Emerging Storage Options
Comparison Between Traditional and Emerging Memory Types
Nanotechnology to Alter Memory Storage in Electronics
MRAM: Pros and Cons
What’s in Store for MRAM?
Ovonic Memory Gathering Momentum
Holographic Memory in Future
R&D in Nanomemory: A Sneak Peak
Carbon Nanotubes Based Memory
Nanocrystalline Memory
Nano-Ionic Memory
Patent Protection Vital for Investment

Table 2. Number of Patents Filed for Select Nanomemory Types from 2003 Onwards in the US, Japan, Europe, and WIPO (includes corresponding Graph/Chart)


Nanotechnology: Breaking Conventional Size Barriers
Volatile and Non-Volatile Memory
Nanomemory: An Introduction
Select Nanomemory Types - Features, and Applications
Comparison of Select Nanomemory Technologies- FRAM, MRAM, and Ovonic Unified Memory
Ovonic Unified Memory
Holographic Memory
Molecular Memory
Polymer Memory


Researchers Develop New Nanotube Flash Memory Design
Researchers to Develop Graphene Memory
Physicists Succeed in Controlling Electron Spin
Chemists Develop New Method to Synthesize Nanorods and Nanowires
Researchers Develop Nanowires to Store Data
IBM Develops New Memory Device
KAIST Develops 8nm NVM Flash Memory
University of Southampton Develops Optical Memory Element
Researchers Develop the Largest Memory Bit Array
Physicists Develop Optical Memory Using Single Gallium Nanoparticle


Toshiba Unveils New 16-Gigabit Memory Chip
Micron Launches 8-Gb SLC high speed NAND
AMD Launches New Stream Processor, AMD FireStream™ 9250
AMD Introduces Two New Graphics Card with TeraFlops Graphics Chip
AMD to Use GDDR5 Memory in New Advanced ATI Radeon™ Graphics Systems
AMD Introduces New Graphics Accelerator, ATI FirePro™ V 8700
AMD Releases New Graphic Processor, ATI Radeon™ E2400
Hitachi Announces Nanotechnology Milestone for Hard Disk Drives Capacity
Ramtron’s New Integrated EDR Incorporates F-RAM Capabilities
Ramtron Unveils New Serial F-RAM with 2Mb Memory
Ramtron Unveils FM3135
Samsung’s Sampling of Smallest-ever 2Gb DDR3 Utilizes 50nm Class Circuiting
Samsung’s New High-Performing Smart Card IC Utilizes 90nm Technology
SanDisk Releases a New WORM Digital Memory Card for Data-Write-Protection
SanDisk’s New Advanced Memory Stick PRO-HG Duo™, Ideal for SLR cameras
Everspin Includes Small Footprint and byte-wide BGA Products into MRAM family
Infineon Technologies Launches X-GOLD™102
Nanochip Unveils a Breakthrough Storage Technology
Ramtron Unveils FM25V05, Serial 512-Kilobit F-RAM
Ramtron Releases High-Speed FM28V100
Ramtron Releases FM25V10, Flexible 1-Megabit Serial F-RAM
Ramtron Enhances Its Range of AEC-Q100-Specified F-RAM Memory Devices
Samsung Introduces First 30nm Flash Memory in the World
Virage Unveils New 65nm Product Lines
RIC Launches 4Mb FRAM
Samsung Launches 8GB Flash Memory
Hewlett-Packard Launches Nanotechnology Based New Computer Chip
Ramtron Unveils 4Mb Non-Volatile FRAM Memory
Samsung Develops a New Chip for Digital TVs
Samsung Launches 8GB moviNAND for Mobiles
Samsung Launches 30nm Process Node Based Primary Flash Memory Chip
Virage Expands the Range of Silicon Aware IP Line
Toshiba Corp to Manufacture NAND Flash Memory Chips with 43nm Technology
Impinj Releases AEON@OTP Nonvolatile Memory Cores
Scientists in South Korea Create the World’s First 8-nanometer Flash Memory Part
Epson and Fujitsu Develop Next-Generation FRAM Technology
Fujitsu Introduces Embedded FRAM for Digital Televisions
Ramtron Extends Grade 1 Automotive Devices Product Range
Ramtron Announces Expansion of +125?C F-RAM-based Automotive Devices
Ramtron Unveils a New 2Mb Parallel High-Density F-RAM memory device
Ramtron Expands Versa 8051Series by Unveiling a 2 KB F-RAM Microcontroller
Ramtron Expands Nonvolatile State Saver Line by Unveiling a 4-bit F-RAM Device
Ramtron Expands F-RAM-based Grade 1 Automotive parts
FRAM Memory from Ramtron Incorporated in Car Audio Platform by Daesung-Eltec
Ramtron Announces Upgrading of Grade 1 Automotive line
Ramtron Introduces Improved F-RAM-Enhanced™ Processor Companions
Samsung Unveils GDDR5 Memory Chip Transfers data at Speeds of 6Gb/s
Samsung Introduces 64Gb MLC NAND Flash Memory for High Density Storage
Samsung Unveils 60nm 2Gb DDR2 DRAM Using Class Processing Technology
Samsung Introduces a Multi-chip High-Density moviMCP Memory Package
Samsung Commences Sampling of 16Gb NAND Flash Utilizing 50nm Processing Technology
Hitachi and Renesas Launch Circuit Technology for On-Chip Nonvolatile Memory Applications
Hitachi Launches 0.05mm x 0.05mm Contactless RFID IC Chip
Infineon Unveils XE166 Family of Real-Time Signal Controllers
Impinj Releases AEON® for Production in TSMC
Ramtron and TI to Launch 4-Mbit FRAM


Hynix to Acquire Stake in ProMOS
Lockheed Martin Acquires Government Business Unit of Nantero
BAE Systems and MAST to Develop Nano-Sensor Technology
Qimonda Partners with Elpida
SVTC Partners with Nantero
Hynix Partners with Nanosys
Qimonda AG in Partnership with Elpida Memory Inc. to Develop Nano-Chips
Nantero Partners with SVTC Technologies to Develop Carbon Nanotube Process
Aewin Technologies Enters into an Agreement with Ramtron
Numonyx Commences Prototype Production of 45nm Wafers
Hynix to Commence Production of 50nm DRAM
SanDisk to Commence Production of MLC NAND Flash Memory
Crocus Technology Raises Funds to Develop MRAM Technology
Samsung and Sun Microsystems Collaborate on SLC Flash Memory Development
ATMI and Ovonyx to Collaborate on High-Volume Manufacture of PCM Products
SanDisk and Toshiba Co-Develop NAND Flash Memory
Energy Optimizers Enters into an Agreement with Ramtron
Freescale Forms New Company for MRAM Development
Hynix Joins the Memory Technology Access Program (M-TAP) of Nanosys
Toshiba Develops 16-Gigabit NAND Flash Memory
Ramtron International Selects Shanghai Welltech for FM25L16 Designing
AMD Partners with TSMC
TSMC Announces Virage as IP Partner
RIC Partners with TI
Samsung and Toshiba Collaborate on Premium NAND Memory Chips
Ovonyx and Hynix Collaborate on PCM Products Development
Ovonyx and Qimonda Collaborate on PCRAM Technology
IBM, Infineon, Freescale, Samsung & Chartered Cooperate on 32-nm Semiconductors
Spansion Inks Agreement with TSMC
AMD Enters into an Agreement with SAMSUNG
Infineon Enters into an Agreement with IBM
Toshiba to Manufacture 43nm NAND Flash Memory Chips
Samsung Starts Production of 16-gigabit NAND Flash Memory
Samsung Commences Production of 60nm DRAM Chips
Intel Corp Receives Approval for New Computer Chip Plant
NVE Corp to Receive New Patent
Intel to Commence Mass Production of Alverstone
National Semiconductor to Qualify Cavendish Kinetics’ Nanomech Process
Samsung Commences Mass Production of NAND Flash Memory Chips


Advanced Micro Devices, Inc. (US)
California Molecular Electronics Corporation (US)
Cavendish Kinetics (US)
Colossal Storage Corporation (US)
Cypress Semiconductor Corporation (US)
Everspin Technologies, Inc. (US)
Fujitsu Limited (Japan)
Hewlett-Packard Development Company, L.P. (US)
Hitachi, Ltd. (Japan)
Honeywell International Inc. (US)
International Business Machines Corp. (US)
Infineon Technologies AG (Germany)
Intel (US)
Nanochip, Inc. (US)
Nanosys, Inc. (US)
Nantero, Inc. (US)
NVE Corporation (US)
Ovonyx, Inc. (US)
Ramtron International Corporation (US)
Samsung Electronics Co., Ltd. (Korea)
SanDisk Corporation (US)
STMicroelectronics NV (Switzerland)
Texas Instruments Inc (US)
ZettaCore, Inc. (US)


Total Companies Profiled:
The United States
The United Kingdom2
Rest of Europe2
Asia-Pacific (Excluding Japan)
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