Global IGBT Market - Forecasts From 2018 to 2023
The global IGBT market is projected to grow at a CAGR of 8.13% to reach US$9.939 billion by 2023, from US$6.217 billion in 2017. IGBT (Insulated Gate Bipolar Transistor) are semiconductor devices which combine the low ON resistance, MOSFET high- speed switching and voltage drive characteristics. This device is used for multiple applications including uninterrupted power supply, inverters, consumer electronics, and solar power conditioning units among various others. The major factors driving the demand for IGBTs are favourable government policies promoting the manufacturing industry and rising investment in renewable energy. In addition, the adoption of electric vehicles will further boost the demand for IGBT over the forecast period.
This research study examines the current market trends related to the demand, supply, and sales, in addition to the recent developments. Major drivers, restraints, and opportunities have been covered to provide an exhaustive picture of the market. The analysis presents in-depth information regarding the development, trends, and industry policies and regulations implemented in each of the geographical regions. Further, the overall regulatory framework of the market has been exhaustively covered to offer stakeholders a better understanding of the key factors affecting the overall market environment.
Identification of key industry players in the industry and their revenue contribution to the overall business or relevant segment aligned to the study have been covered as a part of competitive intelligence done through extensive secondary research. Various studies and data published by industry associations, analyst reports, investor presentations, press releases and journals among others have been taken into consideration while conducting the secondary research. Both bottom-up and top down approaches have been utilized to determine the market size of the overall market and key segments. The values obtained are correlated with the primary inputs of the key stakeholders in the global IGBT value chain. The last step involves complete market engineering which includes analyzing the data from different sources and existing proprietary datasets while using various data triangulation methods for market breakdown and forecasting.
Market intelligence is presented in the form of analysis, charts, and graphics to help the clients in gaining faster and efficient understanding of the global IGBT market.
Major industry players profiled as part of the report are Danfoss, ABB, Infineon Technologies AG, Fuji Electric Co., Ltd., ROHM Semiconductor, Toshiba Electronic Devices and Storage Corporation, and Hitachi Power Semiconductor Devices, Ltd. among others.
Segmentation
The global IGBT market has been analyzed through the following segments:
By Type
Discrete IGBT
Modular IGBT
By Power Rating
High- Power
Medium- Power
Low- Power
By Industry Vertical
Energy and Power
Consumer Electronics
Automotive
Travel and Transportation
Others
By Geography
North America
USA
Canada
Mexico
Others
South America
Brazil
Argentina
Others
Europe
Germany
France
United Kingdom
Spain
Others
Middle East and Africa
Saudi Arabia
Israel
Others
Asia Pacific
China
Japan
South Korea
India
Others
This research study examines the current market trends related to the demand, supply, and sales, in addition to the recent developments. Major drivers, restraints, and opportunities have been covered to provide an exhaustive picture of the market. The analysis presents in-depth information regarding the development, trends, and industry policies and regulations implemented in each of the geographical regions. Further, the overall regulatory framework of the market has been exhaustively covered to offer stakeholders a better understanding of the key factors affecting the overall market environment.
Identification of key industry players in the industry and their revenue contribution to the overall business or relevant segment aligned to the study have been covered as a part of competitive intelligence done through extensive secondary research. Various studies and data published by industry associations, analyst reports, investor presentations, press releases and journals among others have been taken into consideration while conducting the secondary research. Both bottom-up and top down approaches have been utilized to determine the market size of the overall market and key segments. The values obtained are correlated with the primary inputs of the key stakeholders in the global IGBT value chain. The last step involves complete market engineering which includes analyzing the data from different sources and existing proprietary datasets while using various data triangulation methods for market breakdown and forecasting.
Market intelligence is presented in the form of analysis, charts, and graphics to help the clients in gaining faster and efficient understanding of the global IGBT market.
Major industry players profiled as part of the report are Danfoss, ABB, Infineon Technologies AG, Fuji Electric Co., Ltd., ROHM Semiconductor, Toshiba Electronic Devices and Storage Corporation, and Hitachi Power Semiconductor Devices, Ltd. among others.
Segmentation
The global IGBT market has been analyzed through the following segments:
By Type
Discrete IGBT
Modular IGBT
By Power Rating
High- Power
Medium- Power
Low- Power
By Industry Vertical
Energy and Power
Consumer Electronics
Automotive
Travel and Transportation
Others
By Geography
North America
USA
Canada
Mexico
Others
South America
Brazil
Argentina
Others
Europe
Germany
France
United Kingdom
Spain
Others
Middle East and Africa
Saudi Arabia
Israel
Others
Asia Pacific
China
Japan
South Korea
India
Others
1. INTRODUCTION
1.1. Market Overview
1.2. Market Definition
1.3. Scope of the Study
1.4. Currency
1.5. Assumptions
1.6. Base, and Forecast Years Timeline
2. RESEARCH METHODOLOGY
2.1. Research Design
2.2. Secondary Sources
3. EXECUTIVE SUMMARY
4. MARKET DYNAMICS
4.1. Market Segmentation
4.2. Market Drivers
4.3. Market Restraints
4.4. Market Opportunities
4.5. Porter’s Five Force Analysis
4.5.1. Bargaining Power of Suppliers
4.5.2. Bargaining Power of Buyers
4.5.3. Threat of New Entrants
4.5.4. Threat of Substitutes
4.5.5. Competitive Rivalry in the Industry
4.6. Life Cycle Analysis - Regional Snapshot
4.7. Market Attractiveness
5. GLOBAL IGBT MARKET BY TYPE
5.1. Discrete IGBT
5.2. Modular IGBT
6. GLOBAL IGBT MARKET BY POWER RATING
6.1. High- Power
6.2. Medium- Power
6.3. Low- Power
7. GLOBAL IGBT MARKET BY INDUSTRY VERTICAL
7.1. Energy and Power
7.2. Consumer Electronics
7.3. Automotive
7.4. Travel and Transportation
7.5. Others
8. GLOBAL IGBT MARKET BY GEOGRAPHY
8.1. North America
8.1.1. USA
8.1.2. Canada
8.1.3. Mexico
8.1.4. Others
8.2. South America
8.2.1. Brazil
8.2.2. Argentina
8.2.3. Others
8.3. Europe
8.3.1. Germany
8.3.2. France
8.3.3. United Kingdom
8.3.4. Spain
8.3.5. Others
8.4. Middle East and Africa
8.4.1. Saudi Arabia
8.4.2. Israel
8.4.3. Others
8.5. Asia Pacific
8.5.1. China
8.5.2. Japan
8.5.3. South Korea
8.5.4. India
8.5.5. Others
9. COMPETITIVE INTELLIGENCE
9.1. Market Share Analysis
9.2. Recent Investment and Deals
9.3. Strategies of Key Players
10. COMPANY PROFILES
10.1. Danfoss
10.1.1. Company Overview
10.1.2. Financials
10.1.3. Products and Services
10.1.4. Recent Developments
10.2. ABB
10.2.1. Company Overview
10.2.2. Financials
10.2.3. Products and Services
10.2.4. Recent Developments
10.3. Infineon Technologies AG
10.3.1. Company Overview
10.3.2. Financials
10.3.3. Products and Services
10.3.4. Recent Developments
10.4. Fuji Electric Co., Ltd.
10.4.1. Company Overview
10.4.2. Financials
10.4.3. Products and Services
10.4.4. Recent Developments
10.5. ROHM Semiconductor
10.5.1. Company Overview
10.5.2. Financials
10.5.3. Products and Services
10.5.4. Recent Developments
10.6. Toshiba Electronic Devices and Storage Corporation
10.6.1. Company Overview
10.6.2. Financials
10.6.3. Products and Services
10.6.4. Recent Developments
10.7. Hitachi Power Semiconductor Devices, Ltd.
10.7.1. Company Overview
10.7.2. Financials
10.7.3. Products and Services
10.7.4. Recent Developments
10.8. SEMIKRON
10.8.1. Company Overview
10.8.2. Financials
10.8.3. Products and Services
10.8.4. Recent Developments
10.9. Renesas Electronics Corporation
10.9.1. Company Overview
10.9.2. Financials
10.9.3. Products and Services
10.9.4. Recent Developments
10.10. Mitsubishi Electric Corporation
10.10.1. Company Overview
10.10.2. Financials
10.10.3. Products and Services
10.10.4. Recent Developments
LIST OF FIGURES
LIST OF TABLES
DISCLAIMER
1.1. Market Overview
1.2. Market Definition
1.3. Scope of the Study
1.4. Currency
1.5. Assumptions
1.6. Base, and Forecast Years Timeline
2. RESEARCH METHODOLOGY
2.1. Research Design
2.2. Secondary Sources
3. EXECUTIVE SUMMARY
4. MARKET DYNAMICS
4.1. Market Segmentation
4.2. Market Drivers
4.3. Market Restraints
4.4. Market Opportunities
4.5. Porter’s Five Force Analysis
4.5.1. Bargaining Power of Suppliers
4.5.2. Bargaining Power of Buyers
4.5.3. Threat of New Entrants
4.5.4. Threat of Substitutes
4.5.5. Competitive Rivalry in the Industry
4.6. Life Cycle Analysis - Regional Snapshot
4.7. Market Attractiveness
5. GLOBAL IGBT MARKET BY TYPE
5.1. Discrete IGBT
5.2. Modular IGBT
6. GLOBAL IGBT MARKET BY POWER RATING
6.1. High- Power
6.2. Medium- Power
6.3. Low- Power
7. GLOBAL IGBT MARKET BY INDUSTRY VERTICAL
7.1. Energy and Power
7.2. Consumer Electronics
7.3. Automotive
7.4. Travel and Transportation
7.5. Others
8. GLOBAL IGBT MARKET BY GEOGRAPHY
8.1. North America
8.1.1. USA
8.1.2. Canada
8.1.3. Mexico
8.1.4. Others
8.2. South America
8.2.1. Brazil
8.2.2. Argentina
8.2.3. Others
8.3. Europe
8.3.1. Germany
8.3.2. France
8.3.3. United Kingdom
8.3.4. Spain
8.3.5. Others
8.4. Middle East and Africa
8.4.1. Saudi Arabia
8.4.2. Israel
8.4.3. Others
8.5. Asia Pacific
8.5.1. China
8.5.2. Japan
8.5.3. South Korea
8.5.4. India
8.5.5. Others
9. COMPETITIVE INTELLIGENCE
9.1. Market Share Analysis
9.2. Recent Investment and Deals
9.3. Strategies of Key Players
10. COMPANY PROFILES
10.1. Danfoss
10.1.1. Company Overview
10.1.2. Financials
10.1.3. Products and Services
10.1.4. Recent Developments
10.2. ABB
10.2.1. Company Overview
10.2.2. Financials
10.2.3. Products and Services
10.2.4. Recent Developments
10.3. Infineon Technologies AG
10.3.1. Company Overview
10.3.2. Financials
10.3.3. Products and Services
10.3.4. Recent Developments
10.4. Fuji Electric Co., Ltd.
10.4.1. Company Overview
10.4.2. Financials
10.4.3. Products and Services
10.4.4. Recent Developments
10.5. ROHM Semiconductor
10.5.1. Company Overview
10.5.2. Financials
10.5.3. Products and Services
10.5.4. Recent Developments
10.6. Toshiba Electronic Devices and Storage Corporation
10.6.1. Company Overview
10.6.2. Financials
10.6.3. Products and Services
10.6.4. Recent Developments
10.7. Hitachi Power Semiconductor Devices, Ltd.
10.7.1. Company Overview
10.7.2. Financials
10.7.3. Products and Services
10.7.4. Recent Developments
10.8. SEMIKRON
10.8.1. Company Overview
10.8.2. Financials
10.8.3. Products and Services
10.8.4. Recent Developments
10.9. Renesas Electronics Corporation
10.9.1. Company Overview
10.9.2. Financials
10.9.3. Products and Services
10.9.4. Recent Developments
10.10. Mitsubishi Electric Corporation
10.10.1. Company Overview
10.10.2. Financials
10.10.3. Products and Services
10.10.4. Recent Developments
LIST OF FIGURES
LIST OF TABLES
DISCLAIMER
